BCW31
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 30V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 20V 集电极连续输出电流ICCollector CurrentIC| 100mA/0.1A 截止频率fTTranstion FrequencyfT| 100MHz 直流电流增益hFEDC Current GainhFE| 110~220 管压降VCE(sat)Collector-Emitter Saturation Voltage| 250mV/0.25V 耗散功率PcPower Dissipation| 350mW/0.35W Description & Applications| general purpose transistor 描述与应用| 通用