BCW30LT1G

ON SEMICONDUCTOR  BCW30LT1G  单晶体管 双极, PNP, -32 V, 225 mW, -100 mA, 215 hFE

The versatility of this PNP GP BJT from makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.