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IXFA4N100Q

D2PAK N-CH 1000V 4A

N-Channel 1000V 4A Tc 150W Tc Surface Mount TO-263 IXFA


得捷:
MOSFET N-CH 1000V 4A TO263


艾睿:
If you need to either amplify or switch between signals in your design, then Ixys Corporation&s;s IXFA4N100Q power MOSFET is for you. Its maximum power dissipation is 150000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.


Verical:
Trans MOSFET N-CH 1KV 4A 3-Pin2+Tab D2PAK


DeviceMart:
MOSFET N-CH 1000V 4A TO-263


IXFA4N100Q PDF数据文档
图片 型号 厂商 下载
IXFA4N100Q IXYS Semiconductor
IXFA10N80P IXYS Semiconductor
IXFA16N50P IXYS Semiconductor
IXFA3N120TRL IXYS Semiconductor
IXFA180N10T2 IXYS Semiconductor
IXFA130N10T IXYS Semiconductor
IXFA8N50P3 IXYS Semiconductor
IXFA14N60P3 IXYS Semiconductor
IXFA6N120P IXYS Semiconductor
IXFA110N15T2 IXYS Semiconductor
IXFA7N60P3 IXYS Semiconductor