IXFA10N80P
IXYS SEMICONDUCTOR IXFA10N80P 功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
The is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
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- International standard package
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- Unclamped inductive switching UIS rated
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- Easy to drive and to protect
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- Easy to mount
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- Space savings
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- High power density
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- Low package inductance