TSAL7200

VISHAY  TSAL7200.  红外发射器, 17 °, T-1 3/4 5mm, 100 mA, 1.35 V, 800 ns, 800 ns

DESCRIPTION

is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions in mm: ∅ 5

• Peak wavelength: λp= 940 nm

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity: ϕ = ± 17°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS

• Infrared remote control unitswith high power requirements

• Free air transmission systems

• Infrared source for optical counters and card readers