TSAL6100
VISHAY TSAL6100 红外发射器, 高功率, 20 °, T-1 3/4 5mm, 100 mA, 2.6 V, 800 ns, 800 ns
The is a 2-pin high power Infrared Emitting Diode in GaAlAs multi quantum well MQW technology with high radiant power. It is suitable for high pulse current operation. It features good spectral matching with Si photodetectors, ±10° angle of half intensity and 940nm peak wavelength.
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- High reliability
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- High radiant power
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- High radiant intensity
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- Low forward voltage