TSAL4400

VISHAY  TSAL4400  红外发射器, 高功率, 25 °, T-1 3mm, 100 mA, 1.35 V, 800 ns, 800 ns

The is a 940nm Infrared Emitting Diode in GaAlAs multi quantum well MQW technology. It is moulded in a blue-grey plastic package.

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High reliability

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High radiant power

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High radiant intensity

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ϕ = ±25° Angle of half sensitivity

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Low forward voltage

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Suitable for high pulse current operation

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Good spectral matching with Si photodetectors