BSP16T1G

ON SEMICONDUCTOR  BSP16T1G  单晶体管 双极, PNP, -300 V, 15 MHz, 1.5 W, -100 mA, 30 hFE

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.