STGB20V60DF

IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，STMicroelectronics

得捷:
IGBT 600V 40A 167W D2PAK

欧时:
STMicroelectronics IGBT, STGB20V60DF, 3引脚, D2PAK TO-263封装, Vce=600 V, 40 A, ±20V

贸泽:
IGBT Transistors IGBT & Power Bipolar

艾睿:
This STGB20V60DF IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 600V 40A 3-Pin2+Tab D2PAK T/R