BC817K40E6327HTSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

通用 NPN ，

欧时:
Infineon BC817K40E6327HTSA1 , NPN 晶体管, 500 mA, Vce=45 V, HFE:630, 170 MHz, 3引脚 SOT-23封装

得捷:
TRANS NPN 45V 0.5A SOT23

贸泽:
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5

艾睿:
The versatility of this NPN BC817K40E6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT NPN 45V 0.5A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 45V 0.5A 500mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN 45V 0.5A SOT-23