STGB18N40LZT4

STMICROELECTRONICS  STGB18N40LZT4  单晶体管, IGBT, 30 A, 1.35 V, 150 W, 390 V, TO-263, 3 引脚

IGBT 分立，STMicroelectronics

### IGBT 分立件和模块，STMicroelectronics

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT 420V 30A 150W D2PAK

欧时:
### IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

立创商城:
STGB18N40LZT4

贸泽:
IGBT 晶体管 EAS 180 mJ-400 V

e络盟:
单晶体管, IGBT, 30 A, 1.35 V, 150 W, 390 V, TO-263 D2PAK, 3 引脚

艾睿:
This STGB18N40LZT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 360 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

安富利:
Trans IGBT Chip N-CH 360V 30A 3-Pin2+Tab D2PAK T/R

富昌:
D2PAK

Chip1Stop:
Trans IGBT Chip N-CH 360V 30A Automotive 3-Pin2+Tab D2PAK T/R

Verical:
Trans IGBT Chip N-CH 360V 30A 150000mW Automotive 3-Pin2+Tab D2PAK T/R

DeviceMart:
IGBT 400V 30A D2PAK