IGBT 晶体管 PTD HIGH VOLTAGE
IGBT 沟槽型场截止 650 V 80 A 283 W 通孔 TO-3P
得捷:
TRENCH GATE FIELD-STOP IGBT, HB
贸泽:
IGBT 晶体管 PTD HIGH VOLTAGE
艾睿:
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin3+Tab TO-3P Tube
Verical:
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin3+Tab TO-3P Tube
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | STGWT40HP65FB | ST Microelectronics 意法半导体 | |
 | STGW20H60DF | ST Microelectronics 意法半导体 | |
 | STGW35HF60W | ST Microelectronics 意法半导体 | |
 | STGWT30H65FB | ST Microelectronics 意法半导体 | |
 | STGWT30H60DFB | ST Microelectronics 意法半导体 | |
 | STGW19NC60W | ST Microelectronics 意法半导体 | |
 | STGWT40H60DLFB | ST Microelectronics 意法半导体 | |
 | STGWT40H65DFB | ST Microelectronics 意法半导体 | |
 | STGW30H60DFB | ST Microelectronics 意法半导体 | |
 | STGWT20H60DF | ST Microelectronics 意法半导体 | |
 | STGWT30V60F | ST Microelectronics 意法半导体 |
