Trans IGBT Chip N-CH 600V 30A 170000mW 3Pin3+Tab TO-3PN Sack
IGBT 600V 30A 170W Through Hole TO-3PN
得捷:
IGBT 600V 30A 170W TO3PN
艾睿:
Trans IGBT Chip N-CH 600V 30A 170000mW 3-Pin3+Tab TO-3PN Sack
Chip1Stop:
Trans IGBT Chip N-CH 600V 30A 3-Pin3+Tab TO-3PN
TME:
Transistor: IGBT; 600V; 30A; 170W; TO3PN
Win Source:
IGBT 600V 30A 170W TO3PN / IGBT 600 V 30 A 170 W Through Hole TO-3PN
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | GT30J121Q | Toshiba 东芝 | |
 | GT30S-150-150-0.23-0 | T-Global Technology | |
 | GT30-100-100-0.23-0 | T-Global Technology | |
 | GT30J324 | Toshiba 东芝 | |
 | GT30J311 | Toshiba 东芝 | |
 | GT3020/L2C-B5670AC2CB2/2T | Everlight Electronics 亿光 | |
 | GT3020/L2C-B2832AC2CB2/2T | Everlight Electronics 亿光 | |
| GT30-300-300-0.23-0 | T-Global Technology | |
 | GT30S-320-320-0.23-0 | T-Global Technology | |
 | GT30S-640-320-0.23-0 | T-Global Technology | |
 | GT30J324Q | Toshiba 东芝 |
