GT30J324

TOSHIBA  GT30J324  单晶体管, IGBT, 30 A, 2.45 V, 170 W, 600 V, TO-3P, 3 引脚

The is a 4th generation N-channel silicon Insulated Gate Bipolar Transistor IGBT for use with high power and fast switching applications.

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Enhancement-mode

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FRD included between emitter and collector

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2V Low saturation voltage

e络盟:
TOSHIBA  GT30J324  单晶体管, IGBT, 30 A, 2.45 V, 170 W, 600 V, TO-3P, 3 引脚

艾睿:
Trans IGBT Chip N-CH 600V 30A 3-Pin3+Tab TO-3PN

Chip1Stop:
Trans IGBT Chip N-CH 600V 30A 3-Pin3+Tab TO-3PN

Win Source:
Insulated Gate Bipolar Transistor Silicon N Channel IGBT