IRFR9110PBF

VISHAY  IRFR9110PBF.  晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V

The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

.

Dynamic dV/dt rating

.

Repetitive avalanche rated

.

Surface-mount