BCR183E6327HTSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

双电阻器数字，

Infineon 的一系列双极性结点晶体，配有集成电阻器，允许直接从数字来源驱动，无需其他元件。 双电阻器设备具有串行输入电阻器和连接晶体管基座与发射器的电阻器。

得捷:
TRANS PREBIAS PNP 50V SOT23-3

立创商城:
1个PNP-预偏置 100mA 50V

欧时:
Infineon BCR183E6327HTSA1 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 3引脚 SOT-23封装

艾睿:
Thanks to Infineon Technologies&s; PNP BCR183E6327HTSA1 digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.

Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R

Verical:
Trans Digital BJT PNP 50V 100mA 200mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PREBIAS PNP 0.2W SOT23-3