BSC100N06LS3GATMA1

INFINEON  BSC100N06LS3GATMA1  晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.7 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC100N06LS3GATMA1, 50 A, Vds=60 V, 8引脚 TDSON封装

得捷:
MOSFET N-CH 60V 12A/50A TDSON

贸泽:
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3

艾睿:
Create an effective common drain amplifier using this BSC100N06LS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 60V 12A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 60V; 41A; 50W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

Newark:
MOSFET Transistor, N Channel, 50 A, 60 V, 0.0078 ohm, 10 V, 1.7 V

Win Source:
MOSFET N-CH 60V 50A TDSON-8