BSC130P03LSGAUMA1

INFINEON  BSC130P03LSGAUMA1  晶体管 双极预偏置/数字, BRT, TDSON

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSC130P03LSGAUMA1, 22.5 A, Vds=30 V, 8引脚 TDSON封装

得捷:
MOSFET P-CH 30V 12A/22.5A TDSON

e络盟:
晶体管, MOSFET, BRT, P沟道, -22.5 A, -30 V, 0.0094 ohm, -10 V, -1.5 V

艾睿:
Compared to traditional transistors, BSC130P03LSGAUMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

TME:
Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8

Verical:
Trans MOSFET P-CH 30V 12A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC130P03LSGAUMA1  Bipolar Pre-Biased / Digital Transistor, BRT, TDSON