BSC160N10NS3GATMA1

INFINEON  BSC160N10NS3GATMA1  晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0139 ohm, 10 V, 2.7 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 100V 8.8A/42A TDSON

立创商城:
N沟道 100V 8.8A 42A

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC160N10NS3GATMA1, 42 A, Vds=100 V, 8引脚 TDSON封装

艾睿:
Make an effective common gate amplifier using this BSC160N10NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 60000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R

Win Source:
MOSFET N-CH 100V 42A TDSON-8