SI9945DY
双N沟道增强型MOSFET Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are produced using Semiconductor"s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
3.3 A, 60 V. RDSON = 0.100 Ω @ VGS = 10 V
RDSON = 0.200 Ω @ VGS = 4.5 V
Low gate charge.
Fast switching speed.
High power and current handling capability.
Applications
Battery switch
Load switch
Motor controls