JANTX2N1613

NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.