BSC123N10LSGATMA1

INFINEON  BSC123N10LSGATMA1  晶体管, MOSFET, N沟道, 71 A, 100 V, 10 mohm, 10 V, 1.85 V

OptiMOS™2 功率 MOSFET 系列

Infineon

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N-CH 100V 10.6/71A 8TDSON

欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSC123N10LSGATMA1, 71 A, Vds=100 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 71 A, 0.01 ohm, PG-TDSON, 表面安装

艾睿:
This BSC123N10LSGATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 114000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 2 technology.

安富利:
Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 100V 10.6A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC123N10LSGATMA1  MOSFET Transistor, N Channel, 71 A, 100 V, 10 mohm, 10 V, 1.85 V

Win Source:
MOSFET N-CH 100V 71A TDSON-8