MMUN2212LT1G

ON SEMICONDUCTOR  MMUN2212LT1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率, SOT-23

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 100mA/0.1A 基极输入电阻R1 Input ResistanceR1| 22KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 22KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 60-100 截止频率fT Transtion FrequencyfT| 耗散功率Pc Power Dissipation| 0.25W /250mW Description & Applications| Features • Simplifies Circuit Design • Reduces Board Space and Component Count • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 描述与应用| 特性 •简化电路设计 •缩小板级空间和元件数量 •这些器件是无铅，无卤/不含BFR，并符合RoHS标准