D45C12G

ON SEMICONDUCTOR  D45C12G  单晶体管 双极, 通用, PNP, 80 V, 40 MHz, 30 W, 4 A, 120 hFE

If you require a general purpose BJT that can handle high voltages, then the PNP BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 30000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.