IRF820PBF

VISHAY  IRF820PBF.  场效应管, MOSFET, N沟道

The is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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150°C Operating temperature

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Easy to parallel

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Simple drive requirement