BSC109N10NS3GATMA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC109N10NS3GATMA1, 63 A, Vds=100 V, 8引脚 TDSON封装

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 100V 63A TDSON-8-1

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC109N10NS3GATMA1, 63 A, Vds=100 V, 8引脚 TDSON封装

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; BSC109N10NS3GATMA1 power MOSFET. Its maximum power dissipation is 78000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 100V 63A Automotive 8-Pin TDSON EP T/R