MPSA42RL1G

ON SEMICONDUCTOR  MPSA42RL1G  单晶体管 双极, NPN, 300 V, 50 MHz, 625 mW, 50 mA, 25 hFE

Thanks to , your circuit can handle high levels of voltage using the NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.