MPSA06RL1G

ON SEMICONDUCTOR  MPSA06RL1G  单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE

Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 625 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.