FDS6875
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS6875 双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV
The is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±8V Gate to source voltage
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- -6A Continuous drain current
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- -20A Pulsed drain current