STGW40N120KD

STMICROELECTRONICS  STGW40N120KD  单晶体管, IGBT, 80 A, 2.8 V, 240 W, 1.2 kV, TO-247, 3 引脚

IGBT 分立，STMicroelectronics

得捷:
IGBT 1200V 80A 240W TO247

欧时:
### IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

贸泽:
IGBT Transistors 40 A - 1200 V SC rugged IGBT

艾睿:
Minimize the current at your gate with the STGW40N120KD IGBT transistor from STMicroelectronics. Its maximum power dissipation is 240000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C.

Chip1Stop:
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin3+Tab TO-247 Tube

力源芯城:
40A,1200V超速二极管保护的IGBT

DeviceMart:
IGBT 1200V 80A 240W TO247

Win Source:
IGBT 1200V 80A 240W TO247