FDD6632

N沟道逻辑电平UltraFET㈢沟槽功率MOSFET 30V ， 9A ， 70mз N-Channel Logic Level UltraFET㈢ Trench Power MOSFET 30V, 9A, 70mз

General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317

Features

• Fast switching

• rDSON = 0.058Ω Typ, VGS = 10V, ID = 9A

• rDSON = 0.090Ω Typ, VGS = 4.5V, ID = 6A

• QgTOT Typ = 2.6nC, VGS = 5V

• Qgd Typ = 0.8nC

• CISS Typ = 255pF

Applications

• DC/DC converters