FDD6680A

FAIRCHILD SEMICONDUCTOR  FDD6680A  场效应管, MOSFET, N通道, 30V, 56A

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDSONin a small package.

Features

• 56 A, 30 V  RDSON= 9.5 mΩ@ VGS= 10 V

                  RDSON= 13 mΩ@ VGS= 4.5 V

• Low gate charge 23nC typ.

• Fast Switching

• High performance trench technology for extremely low RDSON