FDD6N50TM_WS

FAIRCHILD SEMICONDUCTOR  FDD6N50TM_WS  晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V

The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.

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100% Avalanche tested

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12.8nC Typical low gate charge

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9pF Typical low Crss