APT33GF120B2RDQ2G

Trans IGBT Chip N-CH 1200V 64A 357000mW 3Pin3+Tab T-MAX

You can use this IGBT transistor from as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 357000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.