XP161A1265PR

功率MOSFET Power MOSFET

最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -4A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.042Ω @2A,4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.7-1.4V 耗散功率PdPower Dissipation| 2W Description & Applications| FEATURES Low On-State Resistance : Rdson = 0.25Ω@ Vgs = -10V Rdson = 0.45Ω@ Vgs = -4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -4.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 描述与应用| 低导通电阻：RDS（ON）=0.25Ω@ VGS=-10V 的Rds（on）=0.45Ω@ VGS=-4.5V 超高速开关 内置栅极保护二极管 驱动电压：-4.5V P沟道功率MOSFET DMOS结构式 小封装：SOT-23