XP162A12A6PR
功率MOS FET Power MOS FET
最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V 最大漏极电流IdDrain Current| -2.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.13Ω @1-1.5A,-4.5V 开启电压Vgs(th)Gate-Source Threshold Voltage| -0.5--1.2V 耗散功率PdPower Dissipation| 2W Description & Applications| Low On-State Resistance : Rdson = 0.17Ω@ Vgs = -4.5V Rdson = 0.3Ω@ Vgs = -2.5V Ultra High-Speed Switching Dribing Voltage : -2.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package 描述与应用| 低导通电阻:RDS(ON)=0.17Ω@ VGS=-4.5V RDS(ON)=0.3Ω@ VGS=-2.5V 超高速开关 Dribing电压:-2.5V 内置栅极保护二极管 P沟道功率MOSFET DMOS结构式 小包装