XP161A02A1PR

XP161A02A1PR N沟道MOSFET 20V 3A SOT-89 marking/标记 102 高速开关/低导通电阻

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 12V 最大漏极电流Id Drain Current| 3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.11Ω/Ohm @1.5A,4.5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.7V 耗散功率Pd Power Dissipation| 2W Description & Applications| N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.11Ω max Ultra High-Speed Switching SOT-89 Package 描述与应用| N沟道功率MOS FET DMOS结构 低导通电阻0.11（最大值） 超高速开关 SOT-89封装

Win Source:
N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.