APT50GR120JD30

功率半导体功率模块射频功率MOSFET Power Semiconductors Power Modules RF Power MOSFETs

The infineon IGBT module from will work effectively even with higher currents. Its maximum power dissipation is 417000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This device utilizes npt technology. This IGBT driver board has an operating temperature range of -55 °C to 150 °C.