APT50GN60BG

谐振模式的Combi IGBT Resonant Mode Combi IGBT

This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 366000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.