APT54GA60BD30

高速PT IGBT High Speed PT IGBT

This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 416000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.