2N1486

NPN硅中功率晶体管 NPN SILICON MEDIUM POWER TRANSISTOR

This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

艾睿:
Compared to other transistors, the NPN 2N1486 general purpose bipolar junction transistor, developed by Microsemi, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 12 V. Its maximum power dissipation is 1750 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 55 V and a maximum emitter base voltage of 12 V.

Verical:
Trans GP BJT NPN 55V 3A 1750mW 3-Pin TO-8 Tray