BSZ0909NDXTMA1
双路场效应管, MOSFET, 双N沟道, 20 A, 30 V, 0.0145 ohm, 10 V, 1.6 V
Summary of Features:
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- Ultra-low Q g
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- Symmetric half bridge in a small 3.0x3.0mm² package outline
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- Exposed pads
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- Logic level 4.5V rated
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- RoHS compliant 6/6 full lead free
Benefits:
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- Low switching losses
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- High switching frequency operation
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- Lowest parasitics
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- Low operating temperature
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- Low gate drive losses
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- RoHS 6/6 lead free product
Target Applications:
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- Wireless power
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- Multicopter
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- Drives