STGW40H120F2

Trans IGBT Chip N-CH 1200V 80A 468000mW 3Pin3+Tab TO-247 Tube

IGBT 沟槽型场截止 1200 V 80 A 468 W 通孔 TO-247

得捷:
IGBT 1200V 40A HS TO-247

艾睿:
This powerful and secure STGW40H120F2 IGBT transistor from STMicroelectronics will make sure your circuit works properly. Its maximum power dissipation is 468000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes field stop|trench technology. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin3+Tab TO-247 Tube

儒卓力:
**IGBT 1200V 80A 2.1V TO247 **

Win Source:
IGBT 1200V 40A HS TO-247 / IGBT Trench Field Stop 1200 V 80 A 468 W Through Hole TO-247-3