FQP22N30
FAIRCHILD SEMICONDUCTOR FQP22N30 晶体管, MOSFET, N沟道, 21 A, 300 V, 160 mohm, 10 V, 5 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 47nC Typical low gate charge
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- 40pF Typical low Crss