FQP2N90

FAIRCHILD SEMICONDUCTOR  FQP2N90  功率场效应管, MOSFET, N沟道, 2.2 A, 900 V, 5.6 ohm, 10 V, 5 V

The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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Low gate charge 12nC

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Low Crss 5.5pF

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100% avalanche tested