ISL9N306AD3

N沟道逻辑电平PWM优化UltraFET沟道功率MOSFET 30V ， 50A ， 6mз N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз

General Description

This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features

• Fast switching

• rDSON = 0.0052Ω Typ, VGS = 10V

• rDSON = 0.0085Ω Typ, VGS = 4.5V

• Qg Typ = 30nC, VGS = 5V

• Qgd Typ = 11nC

• CISS Typ = 3400pF

Applications

• DC/DC converters