SI1427EDH-T1-GE3

VISHAY  SI1427EDH-T1-GE3  晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV

The is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.

.

2000V ESD performance

.

Built in ESD protection with Zener diode

.

100% Rg tested

.

-55 to 150°C Operating temperature range

.

Halogen-free