SI1401EDH-T1-GE3

VISHAY  SI1401EDH-T1-GE3  晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV

The is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, PA switch and battery switch applications.

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1500V ESD performance

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Halogen-free

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100% Rg tested

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-55 to 150°C Operating temperature range