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IXTT90P10P

P沟道 100V 90A

表面贴装型 P 通道 100 V 90A(Tc) 462W(Tc) TO-268AA


得捷:
MOSFET P-CH 100V 90A TO268


立创商城:
P沟道 100V 90A


贸泽:
MOSFET -90.0 Amps -100V 0.250 Rds


艾睿:
Compared to traditional transistors, IXTT90P10P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 462000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET P-CH 100V 90A 3-Pin2+Tab TO-268


DeviceMart:
MOSFET P-CH 100V 90A TO-268


IXTT90P10P PDF数据文档
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