BSP125H6327XTSA1

Infineon SIPMOS® N 通道 MOSFET### MOSFET 晶体管，InfineonInfineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能

SIPMOS® N 通道 MOSFET

得捷:
MOSFET N-CH 600V 120MA SOT223-4

欧时:
### Infineon SIPMOS® N 通道 MOSFET### MOSFET 晶体管，InfineonInfineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能

立创商城:
N沟道 600V 120A

贸泽:
MOSFET N-Ch 600V 120mA SOT-223-3

e络盟:
晶体管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSP125H6327XTSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 1800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes sipmos technology. This N channel MOSFET transistor operates in enhancement mode.

Chip1Stop:
Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin3+Tab SOT-223 T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223

Verical:
Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin3+Tab SOT-223 T/R

Win Source:
MOSFET N-CH 600V 120MA SOT-223